The Indian Institute of Technology (IIT) Bombay and Iit Bhubaneswar and Fabless Semiconductor Startup IVP Semi have signed a three -part Mou for the design and development of specialized MOSFETs for silicon -silicon -Power -mosfets for EVS and other applications.
According to a media release, the project will use the collective know -how of the two leading academic institutions and an innovator in the industry.
While IIT Bombay and Iit Bhubaneswar will contribute to their research sources and academic know-how, IVP Semi brings with it its industry-leading experience and findings.
Cooperation focuses on key areas such as product definition, design optimization, device element and characterization. By optimizing the power of the power supply, the project aims to develop tailor -made solutions that correspond to the growing demand for progressive stream electronics in areas such as automobiles, renewable energies, industrial automation and entertainment electronics.
“IVP Semi is proud to work with the leading academic institutions of India in order to translate advanced research into highly effective, ready-to-market power semiconductor solutions. By combining the latest innovation with a practical, scalable design, we want to develop products that increase for both India and global markets, “said Ponni Carlin, COO, from IVP Semi.” This cooperation also agrees with the mission of IVP Semi, Promote local talents and innovations through skills and to close the gap between industry and science for a stronger, technologically independent nation. “
“Iit Bombay about his Semiconductor Center Semix is pleased to work with IVP Semi and Iit Bhubaneswar to promote the development of Power Semiconductor solutions in India,” said Prof. Sachin Patwardhan, Dean R&D, IIT Bombay.
“This collaboration represents a milestone for the Indian semiconductor -f & e ecosystem,” said Prof. Shreepad Karmalkar, director Iit Bhubaneswar. “We expect the combination of academic ingenuity and industry competence to lead to the indigenous development of market -leading performance devices.”